The startup company mqSemi has introduced a Singular Point Source MOS (S-MOS) cell design that is suitable for power MOS based devices. Using Silvaco Victory Process and Device Software, the S-MOS ...

Hitachi has developed a SiC-based ‘TED-MOS’ (Trench-Etched-Double-Diffused MOS) device using a fin-structured trench MOSFET based on the conventional DMOS-FET. An energy saving of 50% over a DMOS-FET ...

Infineon Technologies AG introduced its first power switching devices designed specifically for use in space and avionics applications. Infineon Technologies AG introduced its first power switching ...

The impact of on-resistance on MOSFETs. The role of temperature coefficient in comparing different MOSFETs' on-resistance. What type of FET has the lowest conduction losses? There's nothing quite like ...

The performance potential of SiC is indisputable. The key challenge to be mastered is to determine which design approach achieves the biggest success in applications. Advanced design activities are ...

This course presents in-depth discussion and analysis of metal-oxide-semiconductor field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs) including the equilibrium characteristics, ...

A hydrogen-based two-step annealing process improves SiC MOS device efficiency and reliability, expanding voltage range for electric vehicles and renewable energy systems. SiC power devices offer ...

The development of wide bandgap silicon carbide (SiC) compound semiconductors has proved to be extremely beneficial for power conversion applications. Capable of switching at significantly higher ...